Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

A novel, white light-emitting diode structure with improved thermal characteristics is designed for providing efficient light which may be used especially in the underground mining environment. It describes a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material that promises enhanced efficiency by 30.1% and reduced droop of 0.491%. The power HfO2/SiO2 bi-layer are attributed to significant minimization overflow electrons fundamentally responsible degradation through p-GaN region. In this article encapsulant based on not only enhances extraction but opens broad range engineering capabilities composites. Our generated from monolithic composition blue yellow spectrum eventually creates light. This minimizes problems related multiple numbers LEDs, green gap phosphor color rendering.